发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem that the electrical characteristic such as threshold voltage for driving is liable to fluctuate with time in a conventional solid-state image pickup device having gate electrodes to which a relatively high voltage is applied and gate electrodes to which a relatively low voltage is applied. SOLUTION: An ON film or an ONO film is used as gate insulating film for gate electrodes to which a relatively low voltage is applied and an oxide insulating film is used as gate insulating film for gate electrodes to which a relatively high voltage is applied.
申请公布号 JP2001168202(A) 申请公布日期 2001.06.22
申请号 JP19990346480 申请日期 1999.12.06
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 OKAMOTO HIDEKAZU
分类号 H01L21/8234;H01L27/088;(IPC1-7):H01L21/823 主分类号 H01L21/8234
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