| 摘要 |
PROBLEM TO BE SOLVED: To achieve compatibility between a remaining mask film on a photoresist layer and suppression on a fluctuation in size of a mask on the photoresist layer during a dry etching process on an organic lens coating. SOLUTION: During a dry etching process of an organic lens coating 12, since a gas mixture of sulfur dioxide, oxygen, and chlorine is used, a deposit film 14 is formed of a reactive product, which is produced by the effect of the sulfur dioxide in the gas mixture, on a side wall of a photoresist film 13. The chlorine in the gas mixture improves a selecting ratio of the photoresist film 13 and the organic lens coating 12. Further, since a mixture ratio of sulfur dioxide, oxygen, and chlorine is optimized in the gas mixture, without causing failure in forming a pattern of the organic lens coating 12 or damage to an underlayer of a conductive film 11, it is possible to suppress a fluctuation in size of a mask on the photoresist film 13 and to obtain a remaining mask required for the photoresist film 13 during the following dry etching process of the conductive film 11.
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