| 摘要 |
In a method of manufacturing a semiconductor device comprising a semiconductor body (1) which is provided at a surface (2) with a transistor comprising a gate structure (21), a patterned layer (10) is applied defining the area of the gate structure (21). Subsequently, a dielectric layer (18) is applied in such a way, that the thickness of the dielectric layer (18) next to the patterned layer (10) is substantially equally large or larger than the height of the patterned layer (10), which dielectric layer (18) is removed over part of its thickness until the patterned layer (10) is exposed. Then, the patterned layer (10) is subjected to a material removing treatment, thereby forming a recess (19) in the dielectric layer (18), and a contact window (28, 29) is provided in the dielectric layer. A conductive layer (30) is applied filling the recess (19) and the contact window (28, 29), which conductive layer (30) is subsequently shaped into the gate structure (21) and a contact structure (26, 27) establishing an electrical contact with the surface (2) of the semiconductor body (1). |
