发明名称 |
Magnetic dual element with dual magnetic states and fabricating method thereof |
摘要 |
<p>An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. <IMAGE></p> |
申请公布号 |
EP1109168(A2) |
申请公布日期 |
2001.06.20 |
申请号 |
EP20000127093 |
申请日期 |
2000.12.11 |
申请人 |
MOTOROLA, INC. |
发明人 |
CHEN, EUGENE YOUJUN;SLAUGHTER, JON MICHAEL;DURLAM, MARK;DEHERREA, MARK;TEHRANI, SAIED N. |
分类号 |
G01R33/09;G11B5/39;G11C11/16;H01F10/26;H01F10/32;H01F41/14;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C11/15 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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