发明名称 Magnetic dual element with dual magnetic states and fabricating method thereof
摘要 <p>An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. &lt;IMAGE&gt;</p>
申请公布号 EP1109168(A2) 申请公布日期 2001.06.20
申请号 EP20000127093 申请日期 2000.12.11
申请人 MOTOROLA, INC. 发明人 CHEN, EUGENE YOUJUN;SLAUGHTER, JON MICHAEL;DURLAM, MARK;DEHERREA, MARK;TEHRANI, SAIED N.
分类号 G01R33/09;G11B5/39;G11C11/16;H01F10/26;H01F10/32;H01F41/14;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C11/15 主分类号 G01R33/09
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