| 摘要 |
The present invention provides a structure and a method for formation of interconnect having a barrier layer, aluminum layer on the barrier layer, a reaction prevention layer on the aluminum layer, an antireflective coating layer on the reaction prevention layer, a dielectric layer, a via, a conductive plug, and another aluminum layer on the via and the dielectric layer. This structure prevents interconnects from contact resistance failure caused by an aluminum nitride film AlF, a titanium fluorine film TixFF, aluminum overetching, and aluminum consumption. As a result of this invention, via electromigration and aluminum line electromigration characteristics are improved in semiconductor devices.
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