发明名称 |
Method of measuring dielectric layer thickness using SIMS |
摘要 |
Semiconductor structures having dielectric material layers that are below 3 nanometers in thickness can now be measured with greater precision and in less time using a SIMS device. In an example embodiment of the present invention, a method of measuring the thickness of a dielectric material layer of a semiconductor structure formed on a substrate includes directing a high energy ion beam at a portion of the substrate and sputtering off a plurality of targeted ions from the substrate. The thickness of the dielectric material layer is then determined as a function of a dosage level of the targeted ion and a density of the targeted ion in the dielectric material.
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申请公布号 |
US6248603(B1) |
申请公布日期 |
2001.06.19 |
申请号 |
US20000615393 |
申请日期 |
2000.07.13 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
JONES CLIVE MARTIN;ZHAO JIN |
分类号 |
G01N23/00;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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