| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase a margin between a bit line and a storage node contact and to reduce capacitance between bit lines. CONSTITUTION: In the method, pluralities of cell regions(21) are formed in a semiconductor substrate, and pluralities of word lines(22) are formed in a direction perpendicular to the cell regions(21). Then, sidewall spacers(23) are formed on sides of the word lines(22), and source/drain regions are formed in the cell regions(21). Next, an interlayer dielectric layer is formed over the substrate and selectively etched to form the first contact holes exposing the source/drain regions, and then the first contact holes are filled with conductive plugs(25). Next, an insulating layer is formed over entire surfaces and selectively etched to form the second contact holes(26) for the bit line(27). Thus, one bit line(27) can be formed to every two adjacent cell regions(21).
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