| 摘要 |
PURPOSE: A diffusion furnace for a low pressure chemical vapor deposition is provided to obtain a uniform thickness of deposition film without the rotation of a wafer boat by injecting a processing gas to the omni-direction of the wafer boat to react on a plurality of wafers loaded on the wafer boat. CONSTITUTION: A wafer boat(15) on which a plurality of wafers is loaded, is placed on a magnetic seal unit(17), and is loaded on an internal tube(12) to place on the inside of an injection ring(105) in a ring-type gas injection nozzle. At the same time, a cap(16) of the wafer boat contacts with the lower side of a flange(14) so that the insides of the internal tube(12) and the external tube(10) extrude the air. In this condition, the internal tube(12) and the external tube(10) form a vacuum. A processing gas flows in the injection ring(105) via a straight-type nozzle tip or a L-type nozzle tip from a supply tube(22) of the processing gas according to the class of a deposition film. The gas is injected to the omni-direction of the wafer boat(15) by the same quantity of flow via a plurality of injection holes.
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