发明名称 CREATION OF RESIST STRUCTURES
摘要 The invention relates to a method for creating negative resist structures, according to which a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using an aqueous-alkaline developer solution and silylated from a liquid phase. The resist contains the following constituents: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; optionally one or more additives.
申请公布号 WO0142860(A1) 申请公布日期 2001.06.14
申请号 WO2000DE04237 申请日期 2000.11.27
申请人 INFINEON TECHNOLOGIES AG;ELIAN, KLAUS;HIEN, STEFAN;RICHTER, ERNST;SEBALD, MICHAEL 发明人 ELIAN, KLAUS;HIEN, STEFAN;RICHTER, ERNST;SEBALD, MICHAEL
分类号 G03F7/004;G03F7/039;G03F7/075;G03F7/40 主分类号 G03F7/004
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