发明名称 |
CREATION OF RESIST STRUCTURES |
摘要 |
The invention relates to a method for creating negative resist structures, according to which a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using an aqueous-alkaline developer solution and silylated from a liquid phase. The resist contains the following constituents: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; optionally one or more additives. |
申请公布号 |
WO0142860(A1) |
申请公布日期 |
2001.06.14 |
申请号 |
WO2000DE04237 |
申请日期 |
2000.11.27 |
申请人 |
INFINEON TECHNOLOGIES AG;ELIAN, KLAUS;HIEN, STEFAN;RICHTER, ERNST;SEBALD, MICHAEL |
发明人 |
ELIAN, KLAUS;HIEN, STEFAN;RICHTER, ERNST;SEBALD, MICHAEL |
分类号 |
G03F7/004;G03F7/039;G03F7/075;G03F7/40 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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