发明名称 SILICON NITRIDE-BASED SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a silicon nitride-based sintered compact excellent in strength at a temperature ranging from normal temperature to 1,000 deg.C and also excellent in static fatigue property and abrasion resistance. SOLUTION: This sintered compact comprises silicon nitride as a principal component, at least one of group 3a elements in an amount of 6.0-12.0 wt.% in terms of their oxides, aluminum in an amount of 1.0-5.0 wt.% in terms of its oxide, excess oxygen in an amount of 1.0-3.0 wt.% in terms of silicon dioxide and niobium in an amount of 0.5-7.0 wt.% in terms of its oxide. The sintered compact has a relative density of >=98% and also at least part of niobium is a carbide.
申请公布号 JP2001158668(A) 申请公布日期 2001.06.12
申请号 JP19990340670 申请日期 1999.11.30
申请人 KYOCERA CORP 发明人 FUKUTOME TAKEO;SATO MASAHIRO
分类号 C04B35/584 主分类号 C04B35/584
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