发明名称 Ferroelectric storage device
摘要 An object of the present invention is to provide a ferroelectric storage device which has long life in use. A switch-signal generating portion 40 automatically generates switch signals in predetermined timing. A reversal-of-polarity controlling portion 36 changes, on the switch signal, the polarity states of ferroelectric storage cells composing an information storage portion 30. After that the reversal-of-polarity controlling portion 36 further performs a certain number of write operations or read-out operations on said ferroelectric storage cell so as to further move the polarity state in the direction of the changed polarity. A gate controlling portion 38 gives a control-of-input-gate signal and a control-of-output-gate signal to an input gate portion 32 and an output gate portion 34, thereby changing states of their operations. Therefore, the polarity state can be changed if required with the same data being stored in the ferroelectric storage cell. That prevent the ferroelectric storage cell from getting the bad electric property (imprint effect).
申请公布号 US6246602(B1) 申请公布日期 2001.06.12
申请号 US19970995025 申请日期 1997.12.19
申请人 ROHM CO., LTD. 发明人 NISHIMURA KIYOSHI
分类号 G11C14/00;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C14/00
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