| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring structure which never increases the wiring area or deteriorates the signal transfer characteristics with improving the EM resistance of a wiring having bends on a chip of the semiconductor device, and minimizes the addition of manufacturing steps of improving the EM resistance. SOLUTION: A wiring 1 is bent at a virtual junction 2 of a first straight part 11 of a width W1 in a first direction and a second straight part 12 of a width W2 in a second direction, along a line extending from an inner corner bent point P0 to an outer corner bent point Q0. A region of the wiring 1 or a bent part 3 is defined by a first straight line 16 extending at right angles across the first straight part 11 via a position P1 at a distance W1 from the first straight part 11 on the end edge forming the inner angle bent point P0, and a second straight line 17 extending at right angles across the second straight part 12 via a position P2 at a distance W2 from the second straight part 12. The wiring film thickness t (=s+Δs) of the bent part 3 is increased byΔs projecting to the upper layer from the thickness (s) of a reference film thickness part 10 to form a film thickness reinforced part, thus increasing the sectional area.
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