| 摘要 |
According to the invention, a recess (V) is interposed between a first source/drain region (S/D1) and a second source/drain region (S/D2) that reach down to a first depth (T1), said recess reaching deeper than the first depth (T1). The recess (V) is provided with a gate dielectric (GD). A gate electrode (GA) is disposed in the recess (V) and extends from the bottom of said recess (V) down to the first depth (T1). An insulating structure (I) is disposed on said gate electrode (GA) and spaces a contact (K) to the gate electrode (GA) in the recess (V) apart from the source/drain regions (S/D1, S/D2). Said source/drain regions (S/D1, S/D2) can be subdivided into highly doped regions (H1, H2) and lightly doped regions (N1, N2). In order to produce self-adjusting source/drain regions (S/D1, S/D2) with respect to the gate electrode (GA) at least parts of the source/drain regions (S/D1, S/D2) are produced by oblique implantation after the gate electrode (GA) has been produced and before the insulating structure (I) and the contact (K) are produced.
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