| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, where it is normally difficult for a nitride semiconductor device to meet requirements such as high performance, annealing controllability, and characteristic uniformity at the same time, so as to provide a nitride semiconductor device which possesses an N-type electrode suitable to these requirements and method of manufacturing the same. SOLUTION: An electrode is provided on an N-type conductivity nitride semiconductor for the formation of a nitride semiconductor device, where the electrode is of a four-layered structure composed of a first W-containing layer, a second Al-containing layer, a third Pt-containing layer, and a fourth Au or Pt-containing layer, and the electrode is connected electrically through the fourth layer. With this setup, even if the nitride semiconductor device is possessed of an N-type electrode formed of multilayred thin film, diffusion of elements into the N-type electrode can be controlled easily, and the nitride semiconductor device with an N-type electrode which is high in adhesion and excellent in ohmic properties can be obtained. |
