发明名称 Negative load pump device
摘要 A negative load pump circuit includes switching MOS transistors and capacitors. Each switching transistor is formed in a well on an integrated circuit, and each transistor has its well contact or body connected to its gate and to its source to receive a phase signal. The device advantageously includes a circuit for the regulation of the negative load pump circuit. This maintains the negative load pump circuit in stopped conditions corresponding to minimum power consumption, and enables a speedy supply of a negative low level expected at the output of the negative load pump circuit for an intended application. This is based upon activation by an external command.
申请公布号 US6239651(B1) 申请公布日期 2001.05.29
申请号 US19980221224 申请日期 1998.12.23
申请人 STMICROELECTRONICS S.A. 发明人 FOURNEL RICHARD
分类号 G11C5/14;G11C16/30;H02M3/07;(IPC1-7):G05F1/10 主分类号 G11C5/14
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