| 摘要 |
PROBLEM TO BE SOLVED: To realize a structure of a laser element of indium,/potassium/ aluminum/arsenic mixed crystal and a ridge-loaded type which can be realized by a simple manufacturing method and can operate at a low threshold and at a high speed with high output, and also to provide a method for manufacturing the element and a light transmission device using it. SOLUTION: Upon manufacturing an optical waveguide of an InP-based ridge load type, an InGaAlAs mixed crystal having a composition wavelength of 1.16μm or higher is used for an etching stop layer 211 to obtain desired ridge waveguide shapes (212, 215). In particular, when a ridge sidewall is made in the form of an inverted mesa, element characteristics are greatly improved through the enlargement of an electrode contact width and constriction of a light emission region, thus forming a light transmission device.
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