| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film for improving productivity by performing NH3 treatment under the conditions of high pressure and low temperature, reducing time required for treating NH3 without reducing nitrifying effect, and preventing time loss being generated when forming the silicon nitride film. SOLUTION: A stage for loading a wafer where an oxide film is formed into an LPC.VD chamber with a high-voltage valve and for performing NH3 treatment under high-pressure/low-temperature conditions, and a stage for forming a silicon nitride film at the same temperature as the NH3 treatment are included, thus eliminating the need for changing pressure or temperature at each process, reducing time required for the treatment without reducing nitrifying effect, and improving productivity.
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