发明名称 APPARATUS AND METHOD FOR PERFORMING SIMPLE CHEMICAL VAPOR DEPOSITION
摘要 An apparatus (40) for applying a protective metal coating to a substrate (54) surface by chemical vapor deposition. A reactor chamber (42) is provided in which the only opening exposable to atmosphere is at an open end having an annular flange (46) extending radially outward from the open end. A base plate (48) covers the opening, and a resilient ring (104) resides within an annular recess (106) formed in the plate (48) so that the ring is sandwiched between the base plate (48) and the flange (46) to provide a strong pressure-bearing seal. The seal is liquid cooled to prevent the ring from melting or oxygen from returning into the purged chamber, and the seal prevents harmful metallic vapor from leaking from the reactor chamber into the atmosphere. A local, liquid-to-gas argon supply (70) is used for producing cleaner, more oxygen-free argon. A cold trap (78) is used to remove harmful metallic salts from the exhaust.
申请公布号 WO0134871(A1) 申请公布日期 2001.05.17
申请号 WO2000US30649 申请日期 2000.11.06
申请人 FAR WEST ELECTROCHEMICAL, INC.;FAIRBOURN, DAVID, C. 发明人 FAIRBOURN, DAVID, C.
分类号 C23C16/44;C23C16/448;(IPC1-7):C23C16/00;C23C16/08 主分类号 C23C16/44
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