发明名称 METHOD FOR RELAXING STRESS IN BLANKET TUNGSTEN FILM FORMED BY CHEMICAL VAPOR DEPOSITION
摘要 <p>A method of forming a blanket tungsten film by CVD process. Before forming a nucleus for a blanket W film, a mixture gas of WF6 gas, SiH4 gas and H2 gas is supplied into a vacuum chamber 12. Here, preprocessing is carried out for about several seconds while the respective flows of gases are regulated such that SiH4 gas is in excess with respect to WF6 gas. Preferably, the WF6 gas/SiH4 gas flow ratio is held within the range of 0.15 to 0.35, whereas the processing time is set to 2 to 10 seconds. After this preprocessing, nucleation is carried out, so as to form a blanket W film, whereby the film stress will not increase even if the W film is formed in a lower-temperature environment. &lt;IMAGE&gt;</p>
申请公布号 EP1100116(A1) 申请公布日期 2001.05.16
申请号 EP19990912121 申请日期 1999.04.06
申请人 APPLIED MATERIALS, INC. 发明人 KITAZAKI, MASAKI;TANAKA, KEIICHI
分类号 C23C16/14;C23C16/02;C23C16/08;H01L21/28;H01L21/285;(IPC1-7):H01L21/285 主分类号 C23C16/14
代理机构 代理人
主权项
地址