| 摘要 |
PURPOSE: To provide an X-ray mask of high precision, which is required for manufacturing a high-performance semiconductor device, its manufacturing method, and a semiconductor device which has favorable property high in yield. CONSTITUTION: This is an X-ray mask which has an X-ray absorber made selectively on an X-ray transmitting film 2, and as this X-ray absorber 1, amorphous structure of TaSiAl, TaSiTi, TaSiCr, TaSiMo, TaSiCu, TaGeAl, TaGeTi, TaGeCr, TaSiMo, or TaGeCu is used. These alloys are high in acid resistance, so it is hard to cause pattern elongation by sidewall oxidation at patterning. Furthermore, these alloys are high in chemical resistance, and are easy of dry etching, and are excellent in stress controllability, too. Moreover, they are large in density at 14 g/cm3. Using an X-ray absorber 1 having such properties enables to manufacture a highly accurate X-ray mask having highly dense and fine patterns.
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