ACTIVE MATRIX SUBSTRATE AND METHOD OF PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an active matrix substrate and a method for its production by which a channel-protecting type active matrix substrate in which the whole face of an a-Si layer can be covered with a passivation film can be formed by using four masks. SOLUTION: A transparent electrode and a metal film are laminated on a transparent insulating substrate, and gate electrodes 2a, 2b and pixel electrodes are formed by using a first mask. Then a gate insulating film 4 and an intrinsic amorphous silicon layer 5 are laminated thereon and processed into a specified form at a time by using a second mask. A specified opening is formed in passivation film 9 which is deposited to cover the top face and side walls of the intrinsic amorphous silicon layer, on which an electrode layers 7, 8 are deposited and formed into specified lines by using a fourth mask. Thus, the channel-protecting active matrix substrate having the intrinsic amorphous silicon layer completely covered with the passivation film is produced by using only four masks.