发明名称 SEMICONDUCTOR INTEGRATED DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated device capable of stably and securely perform electric conduction of a protruding electrode to a transparent electrode on a glass substrate without local stress to an active region. SOLUTION: ACF 26a opened at the side on the active region 51 of a semiconductor chip 28 is bonded onto the glass substrate 33, and the protruding electrode 24 on the semiconductor chip 28 is heat compressed to the transparent electrode 24 on the glass substrate 33. By opening the side on the active region 51, a conductive particle 25a with an insulating film does not exist in the active region 51. Therefore, when the protruding electrode 24 on the semiconductor chip 28 and the transparent electrode 34 are fixed on the glass substrate 33, the active region 51 is free from local stress. As a result, normal operating region in the real operating power supply can be secured in the semiconductor integrated device without narrowing the operating region.</p>
申请公布号 JP2001127106(A) 申请公布日期 2001.05.11
申请号 JP19990307351 申请日期 1999.10.28
申请人 FUJI ELECTRIC CO LTD 发明人 OSHIKAWA KAZUSHI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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