SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To relieve influence to bump electrodes caused by thermal stress before and after mounting a package, and to improve reliability in a semiconductor device (package) having the bump electrodes used as external connection terminals. SOLUTION: In the semiconductor device where an interlayer insulation layer 13 is formed on a semiconductor chip 30, and a sealing resin layer 19 for protecting the semiconductor chip 30 from external atmosphere and at the same time bump electrodes 20 used as external connection terminals are provided, at least the interlayer insulation layer 13 is formed by using resin with a specific low thermal coefficient of expansion and a specific low modulus of elasticity. In a preferred embodiment, the sealing resin layer 19 is also formed by using the resin with a specific low thermal coefficient of expansion and a specific low modulus of elasticity. The specific low thermal coefficient of expansion of 40 ppm/ deg.C or less, preferably, 30 ppm/ deg.C or less, is selected, and the specific low modulus of elasticity of 4 GPa or less, preferably, 3 GPa or less, is selected.