发明名称 |
Integrated circuitry and thin film transistors |
摘要 |
An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; c) depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and d) anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. Such is utilizable to make thin film transistors and other circuitry.
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申请公布号 |
US6229212(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990416818 |
申请日期 |
1999.10.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DENNISON CHARLES H.;MANNING MONTE |
分类号 |
H01L21/336;H01L21/8244;H01L27/11;H01L29/786;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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