发明名称 Integrated circuitry and thin film transistors
摘要 An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; c) depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and d) anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. Such is utilizable to make thin film transistors and other circuitry.
申请公布号 US6229212(B1) 申请公布日期 2001.05.08
申请号 US19990416818 申请日期 1999.10.12
申请人 MICRON TECHNOLOGY, INC. 发明人 DENNISON CHARLES H.;MANNING MONTE
分类号 H01L21/336;H01L21/8244;H01L27/11;H01L29/786;(IPC1-7):H01L23/48 主分类号 H01L21/336
代理机构 代理人
主权项
地址