| 摘要 |
PURPOSE: A method for manufacturing a test pattern of a semiconductor device is provided to automatically perform a measurement through a measurement apparatus, by preventing damage to a capacitor node poly on the test pattern in a subsequent process, thereby forming the test pattern regardless of the size of the pattern. CONSTITUTION: An oxide layer(12) is formed on a semiconductor substrate(11). A photoresist layer is applied on the oxide layer, and a cell portion is patterned by a suitable mask formed in a capacitor. A test pattern portion becomes photosensitive in a circular type by using image interference and by using quadrangles as a mask so that a small and inclined photoresist layer is patterned. The oxide layer is etched by using the photoresist layer as a mask, and a capacitor node poly is formed on the entire surface of the oxide layer and the exposed semiconductor substrate. A spin-on-glass(SOG) is formed on the entire surface to fill the etched portion of the oxide layer. The SOG is etched back until an upper portion of a node poly is exposed. The exposed capacitor node poly is etched back to separate capacitors to be formed in a cell. The remaining SOG is eliminated after the cell and the test pattern are separated. The oxide layer is dry-etched to form a hemispherical grain(HSG)(15) on the capacitor node poly.
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