发明名称 IONIC LITHOGRAPHY METHOD, IMPLEMENTING EQUIPMENT AND RETICLE FOR SUCH EQUIPMENT
摘要 <p>The invention concerns a high-resolution and high-dependability ionic laser method which combines the use of ions with medium charge and high deceleration and a solid multilayer reticle, capable of selectively reflecting said ions. The implementing equipment comprises an ion source (10) including an ECR-type reactor generating ions under vacuum coupled with means for selecting (20, 30) charge, direction, density, speed and parallelism for the ions, and with means for decelerating (50) the ions as they approach the reticle (40) mounted on means (41) mobile along a direction (D). Means for selectively accelerating (70) the beam (F3) backscattered by a reticle (40) layer projects said beam, after it has been concentrated by focusing means (80), onto the wafer to be exposed (60) mounted on mobile means (61).</p>
申请公布号 WO2001031403(A1) 申请公布日期 2001.05.03
申请号 FR2000002827 申请日期 2000.10.11
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