HEAT-TREATING DEVICE FOR SEMICONDUCTOR AND METHOD FOR HEAT-TREATING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To enable a heat-treating device for semiconductor provided with a load-lock chamber to execute such heat treatment that does not deteriorate the life time of a minority carrier. SOLUTION: Si wafers 2 are carried in a reaction furnace 14 while the wafers 2 are loaded in a wafer boat 3. Then silicon oxide films are formed on the wafers 2 by introducing an oxidizing gas into the furnace 14 and raising the temperatures of the wafers 2 to the oxidizing temperature of Si. After oxidization, the atmosphere in the furnace 14 is changed to an inert gas atmosphere and the wafers 2 are cooled to about 700 deg.C. Then the atmospheres in the furnace 14 and a load-lock chamber 1 are changed to oxidizing gas atmospheres and the wafers 2 are carried out from the furnace 14 to the load-lock chamber 1. The wafers 2 are cooled in the load-lock chamber 1 filled up with the oxidizing gas atmosphere.