Verfahren zur Verwendung einer Halbleiteranordnung mit einem Substrat, das eine dielektrisch isolierte Halbleiterinsel aufweist,申请号DE19906033619T-传众专利搜索

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发明名称	Verfahren zur Verwendung einer Halbleiteranordnung mit einem Substrat, das eine dielektrisch isolierte Halbleiterinsel aufweist
摘要
申请公布号	DE69033619(T2)	申请公布日期	2001.04.26
申请号	DE19906033619T	申请日期	1990.12.20
申请人	HARRIS CORP., MELBOURNE	发明人	BEASOM, D.
分类号	H01L21/762;H01L21/331;H01L29/08;H01L29/423;H01L29/73;H01L29/732;H01L29/78;H01L29/786;(IPC1-7):H01L29/732;H01L29/36	主分类号	H01L21/762
代理机构		代理人
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