| 摘要 |
A process for super low deposition rate plasma enhanced chemical vapor deposition (PECVD) of undoped oxide on a single station deposition is provided. A very thin PECVD oxide layer used, for instance, as an oxide liner between a polysilicon gate and a nitride spacer, may be produced in a PECVD chamber with a reduced flow rate of silane, nitrous oxide and molecular nitrogen. The deposition rate may be lowered to 20 angstroms/minute, for example, with this long deposition time providing a better process control. At the same time, the film is dense, silicon rich, highly compressive, provides excellent step coverage and acceptable thickness uniformity.
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