发明名称 |
HF/IPA based process for removing undesired oxides form a substrate |
摘要 |
A method for treating a microelectronics substrate to produce a surface with improved characteristics for subsequent processing. The substrate is treated with HF, IPA, and an inert gas in a narrow range of conditions to remove unwanted oxide layers. The resulting surface is useful for processes like epitaxial deposition which benefit from a clean silicon surface with a low oxygen content.
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申请公布号 |
US6221168(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980098096 |
申请日期 |
1998.06.16 |
申请人 |
FSI INTERNATIONAL, INC. |
发明人 |
CARTER LAWRENCE E.;SCHWAB BRENT;FAYFIELD ROBERT T. |
分类号 |
H01L21/311;(IPC1-7):B08B5/00;C09K13/08;C23F1/12 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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