| 摘要 |
PURPOSE: To provide a light receiving element incorporating a circuit, and a fabrication method thereof, in which a polysilicon emitter, a high speed integrated circuit employing LOCOS isolation and a high speed isolation photodiode are formed on the same substrate. CONSTITUTION: Polysilicon 16 is employed as a diffusion source and an electrode for forming the emitter region 15 of an NPN transistor and local oxidation (also referred to LOCOS oxidation) is employed for isolation at the integrated circuit part. A split photodiode is formed on the same silicon substrate and the diffusion structure thereof can achieve high response or high frequency noise reduction. Since the low response diffusion current component is reduced, response is improved while reducing the capacity of photodiode.
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