发明名称 CLEANING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a cleaning method of a semiconductor wafer that is low cost, obtains effective washing effect where the generation of irregularities or the like is suppressed, and has low load for natural environment. SOLUTION: In a method for cleaning a one-bath cleaning type semiconductor wafer, a set of cleaning process where treatment 101 by oxidation cleaning liquid, treatment 102 by rare fluoric acid, and treatment by rinsing liquid 103 are carried out is repeated at least for two times. After that, a drying process 104 is made. In the method for cleaning the one-bath cleaning type semiconductor wafer, a set of cleaning processes where the treatment by the oxidation cleaning liquid, the treatment by the rinse liquid, and the treatment by the rare fluoric acid, and the treatment by the rinsing liquid are carried out is repeated at least for two times. After that, the drying process is made. In a batch-type semiconductor wafer-cleaning method, a set of cleaning processes where the treatment by oxidation cleaning liquid, and the treatment by the rare fluoric acid are carried out is repeated at least two times. After that, the treatment by the rinsing liquid is performed, and drying process is conducted.
申请公布号 JP2001102343(A) 申请公布日期 2001.04.13
申请号 JP19990274911 申请日期 1999.09.28
申请人 SONY CORP 发明人 ISHIYAMA HIROSHI;SATO NOBUAKI
分类号 B08B3/08;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B3/08
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