| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-IV compound semiconductor epitaxial wafer with improved electrical characteristics. SOLUTION: Since an In composition near the hetero-interface of a channel layer 30 constituted of InGaAs is similar to that of an electron supply layer 4, constituted of InGaP and In composition in the channel layer 30 changes continuously, the diffusion of In atoms is suppressed, and superior interface steepness is obtained. Thus, HEMT of high electron mobility is obtained by using such a III-V compound semiconductor epitaxial wafer.
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