发明名称 |
DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node |
摘要 |
A DRAM cell capacitor is provided, having HSG (hemispherical grain) silicon disposed on a selected portion of a storage node. The capacitor resembles a solid cylindrical configuration having a top portion, a side wall, and a top edge portion sloped downward from the top portion to the side wall. HSG silicon is disposed only on the top portion and the side wall, but not on the sloped top edge portion.
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申请公布号 |
US6215143(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19990377156 |
申请日期 |
1999.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN MIN-SEOG;SHIN JI-CHUL;NAM SEOK WOO;LEE HYUNG-SEOK |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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