发明名称 |
Method for forming super-steep retrograded channel (SSRC) for CMOS transistor using rapid laser annealing to reduce thermal budget |
摘要 |
A method for making a ULSI MOSFET chip includes forming a sacrificial gate on a substrate along with activated source and drain regions, but without initially establishing a doped channel region. The polysilicon portion of the sacrificial gate is then removed and a neutral ion species such as Silicon or Germanium is implanted between the source and drain regions in the region that is to become the doped channel region. A dopant substance is next implanted into the channel region, which is then exposed to ultra-rapid thermal annealing to cause the dopant to form a box-like, super-steep retrograded channel profile. The gate is then re-formed over the now activated doped channel region.
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申请公布号 |
US6214654(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19990238358 |
申请日期 |
1999.01.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/265;H01L21/336;H01L29/10;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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