| 摘要 |
PURPOSE: A method for fabricating a capacitor using tantalum oxide as a dielectric layer is provided to reduce a thickness of an effective oxide layer and to prevent an increase of a leakage current. CONSTITUTION: In the method, an interlayer dielectric layer(12) is formed on a semiconductor substrate(11) and then partly etched to form a contact hole exposing a junction region(10) in the substrate(11). A contact plug(13) is then partially formed in the contact hole, and a contact layer(14) and a diffusion barrier(15) are successively formed therein. Thereafter, a sacrificial oxide layer is formed on an entire structure and patterned to expose the diffusion barrier(15). Then, an anti-oxidation conductive layer(17A) is formed on an entire structure, and the sacrificial oxide layer is removed. Therefore, a lower electrode of a cylindrical structure is obtained from the anti-oxidation conductive layer(17A). After that, the tantalum oxide dielectric layer(18) and an upper electrode are formed thereon in sequence. The anti-oxidation conductive layer(17A) is made of TiSiN and several additives.
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