| 摘要 |
<p>Provided is a method of forming a microcrystalline silicon film by a plasma CVD, which comprises introducing a high frequency electromagnetic wave into a film forming space through an electrode to induce a plasma thereby forming a deposited film on a substrate, wherein the relation of 400 < Q < 10000 is satisfied when Q is defined as Q = P.f<2>/d where d (cm) is the distance between the substrate and the electrode, P (Torr) is the pressure of the film forming space during formation of the deposited film, and f (MHz) is the frequency of the high frequency electromagnetic wave.forming method of microcrystalline silicon film for forming a microcrystalline silicon film by plasma CVD, wherein Q defined as Q = P.f<2>/d satisfies the relational formula of 400 < Q < 10000 where d (cm) is a distance between a substrate on which a deposited film is to be formed, and an electrode to which a high frequency electromagnetic wave for inducing a plasma is guided, P (Torr) is a pressure during formation of the deposited film, and f (MHz) is a frequency of the high frequency electromagnetic wave. This can provide a method of forming the microcrystalline silicon film suitable for the i-type layer of the pin type solar cell at a high rate, notwithstanding using a low-temperature process, without using a high-temperature process. <IMAGE></p> |
