发明名称 ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To form a dense film at low temperature and prevent penetration of moisture, oxygen, or the like from the outside by forming a protecting film by ECR plasma sputtering method. SOLUTION: A protecting film 7 is formed by ECR plasma sputtering method. An organic EL element is composed of a substrate 1, an anode 2, an organic thin film layer 3, a hole transport layer 4, a light-emitting layer 5, a cathode 6, and the protecting film 7. Penetration of hydrogen, oxygen, or the like from the outside is prevented without breaking the EL element including the cathode 6 and others. Preferably, the organic EL element has a pair of electrodes and at least one organic thin film layer interposed between them, and the protecting film for protecting at least part of the outer surface. An electronic device whose part of the outer surface is protected with silicon nitride-oxide SiON has a pair of electrodes arranged on the substrate and at least one organic thin layer interposed between the electrodes.
申请公布号 JP2001085157(A) 申请公布日期 2001.03.30
申请号 JP19990262052 申请日期 1999.09.16
申请人 KYUSHU MATSUSHITA DENKI KK;NAKAJIMA HIROSHI 发明人 KOMATSU TAKAHIRO;GYOTOKU AKIRA;HARA SHINTARO;NAKAJIMA HIROSHI;KO HIROTAME;MURAOKA KATSUNORI;FURUKAWA KATSUHIKO
分类号 G09F9/00;H01L51/50;H05B33/04;H05B33/10;H05B33/12;H05B33/14;(IPC1-7):H05B33/04 主分类号 G09F9/00
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