| 摘要 |
A silicon wafer is heated from an initial pre-heating temperature (T0) up to a first annealing temperature (T1) by a rapid heating up step using an IR lamp. A first annealing is executed at the first annealing temperature (T1). Successively, while the silicon wafer is maintained at a second annealing temperature (T2) lower than the first annealing temperature (T1), a second annealing step is executed by a resistive heating furnace. A thermal oxidation can be executed as the second annealing step. To do so, an equipment for manufacturing a semiconductor device in the present invention is provided with: a heating device having an IR lamp and a resistive heater; an annealing tube having on a surface thereof a plurality of concave portions in such a way that each bottom approaches a central line; a resistive heater wrapped around this annealing tube; and an IR lamp movably inserted into and pulled out from the concave portion from the external. A IR lamp moving unit for moving the IR lamp is connected to the IR lamp. A wafer loader for mounting a plurality of wafers can be carried into and from the annealing tube. The first annealing step using the IR lamp at the rapid heating rate and successively the second annealing step using the resistive heater are performed on the plurality of wafers without performing a cooling step down to the room temperature. Accordingly, it is possible to effectively recover the damage induced by ion implantation and the like and also possible to suppress the enhanced diffusion of impurity resulting from the,damage to thereby improve the controllability of impurity distribution profile.
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