| 摘要 |
PROBLEM TO BE SOLVED: To obtain an electrostatic induction transistor which is excellent in high-frequency characteristics, increased enough in gate input voltage, and high in mutual conductance. SOLUTION: An N+-type GaAs layer 2 as a first source region, a high electron mobility N-type InGaAs layer 3 as a second source region, an I-type AlGaAs layer 4 as a channel region, an N+-type GaAs layer 5 as a drain region are successively grown on a GaAs substrate 1, the N-type InGaAs layer 3 and the I-type AlGaAs layer 4 are patterned so as to be as wide as prescribed, and the N+-type GaAs layer 5 is patterned into a stripe that is narrower than the patterned layers 3 and 4. Thereafter, Zn is diffused as P-type impurities in a vapor phase into the I-type AlGaAs layer 4, the N-type InGaAs layer 3, and the N+-type GaAs layer 2 located on each side of the stripe-shaped N+-type GaAs layer 5, by which a P+-type region 6 is formed as a gate region for the formation of an electrostatic induction transistor.
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