Semiconductor devices with quantum-wave inference layers

摘要

A light-emitting diode 100 having a double hetero junction structure, in which an emission layer 13 made of i-Ga0.89In0.11As is sandwiched by an n-cladding layer 12 made of n-Al0.5Ga0.5As and a p-cladding layer 15 made of p-Al0.5Ga0.5As, comprises an electron reflection layer (eR) 14 between the emission layer 13 and the p-cladding layer 15. The electron reflection layer (eR) 14 has a multiple quantum layer structure with 20 periods of a p-GaAs well layer as a first layer W and a p-Al0.5Ga0.5As barrier layer as a second layer B. Each thickness of the first and the second layers is determined by one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers. As a result, luminous intensity of the light-emitting diode is improved. <IMAGE>