| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce a working current on the occasion of writing in a memory cell and reading out of it in a magnetic memory element wherein the memory cell constituted of a magneto resistance effect film formed by laminating a hard layer of a magnetic material having a relatively large coercive force and a soft layer of a magnetic material having a relatively small coercive force, with a nonmagnetic layer interlaid, is disposed in a part of intersection of first and second current lines intersecting each other perpendicularly. SOLUTION: This magnetic memory element is provided with a stripe-shaped magnetic material layer 5 which is disposed in the vicinity of a soft layer 1 or a hard layer 3 so that it couples in magnetic exchange with the soft layer 1 or the hard layer 3 and which is longer than the length of the soft layer 1 or the hard layer 3 in the direction of the axis of easy magnetization of the soft layer 1 or the hard layer 3 with which it couples in magnetic exchange.</p> |
