SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit which can make the design of its wiring pattern easier by significantly improving the wiring efficiency and degree of freedom for wiring. SOLUTION: On a basic cell 10, the gate electrodes 11 and 12 of a p-type MOS transistor and the gate electrodes 14 and 15 of an N-type MOS transistor are provided. A P-type impurity diffusion region 13 is formed below the gate electrodes 11 and 12 and an N-type impurity diffusion region 16 is formed below the gate electrodes 14 and 15. At both end sections of the basic cell 10, power supply wiring regions 17 and 18 are respectively formed. Each impurity diffusion region 13 or 16 is formed in a projecting shape as a whole with an extension 13a or 16a which is formed in such a way that the front end section of the section 13a or 16a is extended to a spot below the wiring region 17 or 18 so that the region 13 or 16 may be utilized as wiring.