| 摘要 |
PROBLEM TO BE SOLVED: To increase an internal data transfer rate in a semiconductor storage. SOLUTION: Two memory sub arrays MAB0 and MAB1 are provided adjacent to a write/read circuit, a pair of internal data lines IOP are connected to the write/read circuit via a pair of passage wirings FLP at the upper layer of the closer memory sub array for the farther memory sub array. The closer memory sub array connects the pair of internal data into to the write/read circuit. When the word line is simultaneously selected in the two memory sub arrays, the number of internal data transfer bits can be increased by simultaneously selecting a row. |
