| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to minimize a damage of a semiconductor substrate by performing a self-aligned contact formation process to form a contact hole on a source/drain electrode. CONSTITUTION: An isolation layer, a gate oxide layer, a conductive layer, an interlayer dielectric, and the first etch barrier are deposited sequentially on a semiconductor substrate. The first etch barrier pattern(16), an interlayer dielectric pattern, and a gate electrode are formed by etching the first etch barrier, the interlayer dielectric, and the conductive layer. An oxide layer(8) grows on exposed portions of the semiconductor substrate and the gate electrode. A source/drain electrode(7A) of low density is formed by implanting dopants of low density into an inside of the semiconductor substrate. The second etch barrier and an insulating layer are deposited on a whole surface of the above structure. An insulating layer spacer is formed by etching the insulating layer. The second etch barrier spacer(9A) is formed by etching the second etch barrier. A source/drain electrode(7B) of high density is formed by implanting dopants of high density into the inside of the semiconductor substrate. A planarization layer(11) is formed on the whole surface of the above structure. A contact mask is formed on the planarization layer(11) by using a photo-resist layer. The planarization layer(11), the insulating layer spacer, and the oxide layer(8) are sequentially etched by using the contact mask. A contact hole(50) is formed by removing the contact mask.
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