METHOD FOR MANUFACTURING INSULATING LAYER FOR SEMICONDUCTRO DEVICE

摘要

PURPOSE: A method for manufacturing an insulating layer for a semiconductor device is provided to improve reliability by making the insulating layer have a low charge trapping density and a high charge-to-breakdown characteristic. CONSTITUTION: A semiconductor substrate is heated in plasma gas mixed with gas containing an oxygen composition, gas containing heavy hydrogen composition and ammonia gas, to form an insulating layer including nitrogen. Oxygen and heavy hydrogen are respectively used as the gas containing an oxygen composition and the gas containing heavy hydrogen composition, or heavy hydrogen is commonly used as the gas containing an oxygen composition and the gas containing heavy hydrogen composition.