发明名称 |
Semiconductor memory device having test mode |
摘要 |
In an output buffer of a DRAM, a level shifter outputs a step-up potential responsively when an internal data signal goes low or a test mode signature goes high. An N-channel MOS transistor is rendered conductive in response to the step-up potential from the level shifter, and sets a data input terminal to a power supply potential. The internal data signal and the test mode signature share the level shifter and the N-channel MOS transistor, and hence the layout area can be small and a high-level test mode signature can be output.
|
申请公布号 |
US6201748(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US20000556658 |
申请日期 |
2000.04.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAMURA YAYOI;TANAKA KOJI;TSUKIKAWA YASUHIKO |
分类号 |
G11C11/409;G01R31/28;G01R31/3185;G11C7/10;G11C11/401;G11C29/00;G11C29/12;G11C29/14;G11C29/46;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|