METHOD FOR MANUFACTURING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an interlayer dielectric of a semiconductor device is provided to improve reliability, by intensifying a curing process after chemicals of a flowable oxide layer material for the interlayer dielectric is spin-coated. CONSTITUTION: A coating layer of a flowable oxide layer material for an interlayer dielectric is spin-coated on a semiconductor substrate. The coating layer is soft-baked to a desired temperature step to prevent the interlayer dielectric from being cracked. The soft-baked coating layer is hard-baked under a desired condition to prevent a via contact hole of the interlayer dielectric from exploding.