| 摘要 |
PURPOSE: To prevent current leakage among the adjacent wirings by removing an inorganic insulation film other than the side walls of wiring structure by etching back the inorganic insulation film and then embedding a metal film between internal spaces of the inorganic insulation film remaining at the side walls of such wiring structure. CONSTITUTION: On a first Cu film 101, a plasma silicon nitride film 102, a first PAE(polyarylether) film 103, a second PAE film 104, a second plasma silicon nitride film 106 are sequentially formed. Next, at the entire part of the exposed surfaces among the upper surface and side surface of the second plasma silicon oxide film 106, side surface of the second PAE film 105, upper surface and side surface of the first plasma silicon film 104, side surface of the first PAE film 103, side surface of the first plasma silicon nitride film 102 and upper surface of the first Cu film 101, an inorganic insulation film 109 is formed as the third plasma silicon oxide film. In the internal space of this inorganic insulation film 109, the second Cu film 111 is formed with the sputtering.
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