| 摘要 |
PURPOSE: To provide a semiconductor device which can realize both large capacity of a semiconductor storage device and high level of integration of a logic circuit, in a semiconductor device in which a semiconductor storage device and a logic circuit are mixedly mounted on the same semiconductor substrate, and to provide its manufacturing method. CONSTITUTION: In a semiconductor device 1, a first metal layer 28 composed of an embedded metal layer is connected with a diffusion layer 13A in a substrate 10 or with a lower layer wiring 14, further a first metal wiring layer 29, a second metal layer 31 composed of an embedded metal layer, and a second metal wiring layer 32 are connected in order, and a capacitance element C is formed in a trench penetrating insulating layers 27A, 27B sandwiching the first metal layer 29 from above and below, and on the insulating layer 27B. When the semiconductor device is manufactured, the second interlayer insulating layer 27B covering the metal wiring layer 29 on the first interlayer insulating layer 27A is formed. After at least a part of a memory cell part 2 of the first and second interlayer insulating layers 27A, 27B is eliminated, the capacitance element C is formed in the part, where the first and second interlayer insulating layers 27A, 27B are removed.
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